EPC EPC2012
Power Transistor
| Part No. | EPC2012 |
|---|---|
| Datasheet | EPC2012 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
VDS Drain-to-Source Voltage 200 V ID Continuous (TA =25˚C, θJA = 70) Pulsed (25˚C, Tpulse = 300 µs) 3 A 15 Gate-to-Source Voltage VGS Gate-to-Source Voltage 6 V -5 TJ Operating Temperature TSTG Storage Temperature -40 to 125 ˚C -40 to 150 PARAMETER TEST CONDITIONS MIN Static Characteristics (TJ= 25˚C unless otherwise stated) BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 60 µA 200 IDSS Drain Source Leakage VDS = 160 V, VGS = 0 V Gate-Source Forward Leakage IGSS Gate-Source Reverse Leakage VGS = 5 V VGS = -5 V VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 1 mA 0.7 RDS(ON) Drain-Source On Resistance VGS = 5 V, ID = 3 A Source-Drain Characteristics (TJ= 25˚C unless otherwise stated) VSD Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V, T = 25˚C IS = 0.5 A, VGS = 0 V, T = 125˚C All measurements were done with substrate shorted to source. PARAMETER TheTErmSTaClOCNhDaITrIaOcNtSeristics MIN Dynamic Characteristics (TJ= 25˚C unless otherwise stated) CRISθSJC TherInmpaultRCeas...
