EPC2012
Description
eGaN® FET DATASHEET EPC2012 – Enhancement Mode Power Transistor VDSS , 200 V RDS(ON) , 100 mW ID , 3 A NEW PRODUCT EPC2012 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafer...
- Part: EPC2012
- Description: Power Transistor
- Category: Transistor
- Manufacturer: EPC
- Size: 1.54 MB