Datasheet Details
| Part number | EPC2012 |
|---|---|
| Manufacturer | EPC |
| File Size | 1.54 MB |
| Description | Power Transistor |
| Datasheet | EPC2012-EPC.pdf |
|
|
Overview: eGaN® FET DATASHEET EPC2012 – Enhancement Mode Power Transistor VDSS , 200 V RDS(ON) , 100 mW ID , 3 A NEW PRODUCT EPC2012 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers.
| Part number | EPC2012 |
|---|---|
| Manufacturer | EPC |
| File Size | 1.54 MB |
| Description | Power Transistor |
| Datasheet | EPC2012-EPC.pdf |
|
|
|
| Part Number | Description |
|---|---|
| EPC2012C | Power Transistor |
| EPC2010 | Power Transistor |
| EPC2010C | Power Transistor |
| EPC2014 | Power Transistor |
| EPC2015 | Power Transistor |
| EPC2015C | Power Transistor |
| EPC2016 | Power Transistor |
| EPC2016C | Power Transistor |
| EPC2019 | Power Transistor |
| EPC2001 | Power Transistor |