EPC EPC2014
Power Transistor
| Part No. | EPC2014 |
|---|---|
| Datasheet | EPC2014 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Drain-to-Source Voltage (Continuous) 40 V VDS Drain-to-Source Voltage (up to 10,000 5ms pulses at 125° C) 48 V ID Continuous (TA = 25˚C, θJA = 40) Pulsed (25˚C, Tpulse = 300 µs) 10 A 40 Gate-to-Source Voltage VGS Gate-to-Source Voltage 6 V -5 TJ Operating Temperature TSTG Storage Temperature -40 to 150 ˚C -40 to 150 PARAMETER TEST CONDITIONS MIN Static Characteristics (TJ= 25˚C unless otherwise stated) BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 125 µA 40 IDSS Drain Source Leakage VDS = 32 V, VGS = 0 V Gate-Source Forward Leakage IGSS Gate-Source Reverse Leakage VGS = 5 V VGS = -5 V VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 2 mA 0.7 RDS(ON) Drain-Source On Resistance VGS = 5 V, ID = 5 A Source-Drain Characteristics (TJ= 25˚C unless otherwise stated) VSD Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V, T = 25˚C IS = 0.5 A, VGS = 0 V, T = 125˚C All measurements were done with substrate shorted to source. Thermal Characteristics RθJC Thermal Resistance, Junction...
