EPC EPC2016C
Power Transistor
| Part No. | EPC2016C |
|---|---|
| Datasheet | EPC2016C Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 100 V VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 120 V Continuous (TA = 25°C, RθJA = 13.4°C/W) ID Pulsed (25°C, TPULSE = 300 µs) 18 A 75 Gate-to-Source Voltage VGS Gate-to-Source Voltage 6 V -4 TJ Operating Temperature TSTG Storage Temperature –40 to 150 °C –40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 2 RθJB Thermal Resistance, Junction-to-Board 4 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 69 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details. PARAMETER Static Characteristics (TJ = 25°C unless otherwise stated) TEST CONDITIONS BVDSS IDSS Drain-to-Source Voltage Drain-Source Leakage VGS = 0 V, ID = 300 μA VGS = 0 V, VDS = 80 V Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage VGS = 5 V VGS = -4 V VGS(TH) Gate Threshold Volt...
