EPC EPC2016
Power Transistor
| Part No. | EPC2016 |
|---|---|
| Datasheet | EPC2016 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Drain-to-Source Voltage (Continuous) VDS Drain-to-Source Voltage (up to 10,000 5ms pulses at 125° C) 100 120 V V ID Continuous (TA = 25˚C,θJA = 32) Pulsed (25˚C, Tpulse = 300 µs) 11 50 A VGS Gate-to-Source Voltage Gate-to-Source Voltage 6 -5 V TJ Operating Temperature TSTG Storage Temperature -40 to 125 -40 to 150 ˚C PARAMETER Static Characteristics (TJ= 25˚C unless otherwise stated) BVDSS Drain-to-Source Voltage IDSS Drain Source Leakage IGSS Gate-Source Forward Leakage Gate-Source Reverse Leakage VGS(th) RDS(ON) Gate Threshold Voltage Drain-Source On Resistance TEST CONDITIONS VGS = 0 V, ID = 200 µA VDS = 80 V, VGS = 0 V VGS = 5 V VGS = -5 V VDS = VGS, ID = 3 mA VGS = 5 V, ID = 11 A Source-Drain Characteristics (TJ= 25˚C unless otherwise stated) VSD Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V, T = 25˚C IS = 0.5 A, VGS = 0 V, T = 125˚C All measurements were done with substrate shorted to source. Thermal Characteristics MIN 100 0.7 RθJC Thermal Resistance, Juncti...
