EPC EPC2034C
Power Transistor
| Part No. | EPC2034C |
|---|---|
| Datasheet | EPC2034C Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VDS Drain-to-Source Voltage (Continuous) ID Continuous (TA = 25°C) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature VALUE UNIT 200 V 48 A 213 6 V -4 –40 to 150 °C –40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 0.3 RθJB Thermal Resistance, Junction-to-Board 4 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 45 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details EPC2034C eGaN® FETs are supplied only in passivated die form with solder bumps. Die Size: 4.6 mm x 2.6 mm● High Frequency DC/DC Conversion
● Multi-level AC/DC Power Supplies
● Wireless Power
● Solar Micro Inverters
● Robotics
● Class-D Audio
● Low Inductance Motor Drives PARAMETER Static Characteristics (TJ= 25°C unless otherwise stated) TEST CONDITIONS BVDSS Drain-to-Source Vol...
