EPC EPC2034
Power Transistor
| Part No. | EPC2034 |
|---|---|
| Datasheet | EPC2034 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VDS Drain-to-Source Voltage (Continuous) ID Continuous (TA = 25°C, RθJA = 3°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature VALUE UNIT 200 V 48 A 200 6 V -4 –40 to 150 °C –40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 0.45 RθJB Thermal Resistance, Junction-to-Board 3.9 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 45 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details PARAMETER Static Characteristics (TJ= 25°C unless otherwise stated) TEST CONDITIONS BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 0.6 mA IDSS Drain-Source Leakage VDS = 160 V, VGS = 0 V Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage VGS = 5 V VGS = -4 V VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 7 mA RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 20 A VSD Source-Drain Forward Voltage All measurements were done with substrate connected to source.
