EPC EPC2035
Power Transistor
| Part No. | EPC2035 |
|---|---|
| Datasheet | EPC2035 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 60 VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 125°C) 72 V ID Continuous (TA = 25°C, RθJA = 546°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage 1.7 A 24 6 V –4 TJ Operating Temperature TSTG Storage Temperature –40 to 150 °C –40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 6.5 RθJB Thermal Resistance, Junction-to-Board 65 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 100 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details EPC2035 eGaN® FETs are supplied only in passivated die form with solder bumps Die Size: 0.9 mm x 0.9 mmAPPLICATIONS
● High Speed DC-DC conversion● Wireless Power Transfer
● High Frequency Hard-Switching and Soft-Switching Circuits
● Lidar/Pulsed Power
APPLICATIONS
Benefits● Ultra High Efficiency
●...
