EPC EPC2033
Power Transistor
| Part No. | EPC2033 |
|---|---|
| Datasheet | EPC2033 Download |
| Manufacturer |  EPC |
| Description | Power Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
PARAMETER VDS Drain-to-Source Voltage (Continuous) ID Continuous (TA = 25°C, RθJA = 4°C/W) Pulsed (25°C, TPULSE = 300 µs) VGS Gate-to-Source Voltage Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature VALUE 150 48 260 6 -4 -40 to 150 -40 to 150 UNIT V A V °C EPC2033 eGaN® FETs are supplied only in passivated die form with solder bumps. Die Size: 4.6 mm x 2.6 mm● High Frequency DC-DC Conversion
● Motor Drive
● Industrial Automation
● Class-D Audio Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 0.45 RθJB Thermal Resistance, Junction-to-Board 3.9 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 45 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See for details. PARAMETER Static Characteristics (TJ = 25°C unless otherwise stated) TEST CONDITIONS BVDSS IDSS IGSS Drain-to-Source Voltage Drain-Source Leakage Gate-to-Source Forward Le...
