Part F50L2G41LB-104YG2M
Description 3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
Manufacturer Elite Semiconductor Microelectronics Technology
Size 1.32 MB
F50L2G41LB-104YG2M Datasheet (PDF) Download
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Elite Semiconductor Microelectronics Technology

F50L2G41LB-104YG2M Overview

Key Features

  • Voltage Supply: 3.3V (2.7V~3.6V)
  • Organization
  • Memory Cell Array: (128M + 4M) x 8bit
  • Data Register: (2K +
  • Automatic Program and Erase
F50L2G41LB-104YG2M datasheet preview

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