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F50L2G41LB-104YG2M - 3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory

Key Features

  • Voltage Supply: 3.3V (2.7V~3.6V).
  • Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte.
  • Page Read Operation - Page Size: (2K + 64) Byte - Read from Cell to Register with Internal ECC: 100us.
  • Memory Cell: 1bit/Memory Cell.
  • Support SPI-Mode 0 and SPI-Mode 31.
  • Fast Write Cycle Time - Program time:400us - Block Erase time: 4ms.
  • Hardwa.

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Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F50L2G41LB-104YG2ME 3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
F50L2G41LB-50YG2ME 1.8V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGRAM operation is not defined. F50L2G41LB (2M) 3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory Values 3.3V x1, x21, x4 104MHz 1-bit 9.6ns 104MT/s 1ms (maximum value) 1ms (maximum value) FEATURES  Voltage Supply: 3.3V (2.7V~3.