F50L2G41LB-104YG2M Overview
ESMT Flash PRODUCT LIST Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: x2 PROGRAM operation is not defined.
F50L2G41LB-104YG2M Key Features
- Voltage Supply: 3.3V (2.7V~3.6V)
- Organization
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte
- Page Read Operation
- Page Size: (2K + 64) Byte
- Read from Cell to Register with Internal ECC: 100us