F50L2G41LB-104YG2ME Overview
Key Features
- Voltage Supply: 3.3V (2.7V~3.6V)
- Organization
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K +
- Automatic Program and Erase
| Part | F50L2G41LB-104YG2ME |
|---|---|
| Description | 3.3V 2 Gbit (2 x 1 Gbit) SPI-NAND Flash Memory |
| Manufacturer | Elite Semiconductor Microelectronics Technology |
| Size | 1.32 MB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| W25Q128JV | Winbond | 3V 128M-BIT SERIAL FLASH MEMORY |
| 25Q128JVSM | Winbond | 3V 128M-BIT SERIAL FLASH MEMORY |
| W25Q256JV | Winbond | 3V 256M-BIT SERIAL FLASH MEMORY |