Part F59D1G161MB-45BG2M
Description 1.8V NAND Flash Memory
Manufacturer Elite Semiconductor Microelectronics Technology
Size 2.12 MB
Elite Semiconductor Microelectronics Technology

F59D1G161MB-45BG2M Overview

Description

The Device is a 128Mx8bit w.

Key Features

  • Voltage Supply: 1.8V (1.7 V ~ 1.95V)
  • Organization x8
  • Memory Cell Array: (128M + 4M) x 8bit
  • Data Register: (2K +
  • Memory Cell Array: (64M + 2M) x 16bit