F59D8G81KSA Datasheet | Elite Semiconductor Microelectronics Technology

ESMT Flash (Preliminary) F59D8G81KSA (2R) 8 Gbit (1Gb x 8) 1.8V NAND Flash Memory Features - Density ­ 8Gb(4Gb x 2) - Voltage Supply ­ VCC: 1.8V (1.7 V ~ 1.95V) - Organization ­ Page Size: (4K + 256) bytes ­ Data Register: (4K + 256) bytes ­ Block Size: 64Pages = (256K + 16K) bytes ­ Number of Planes: 1 ­ Number of Block per Die (LUN)= 2048 - Automatic Program and Erase ­ Page Program: (4K + 256) bytes ­ Block Erase: (256K + 16K) bytes - Page Read Operation ­ Random Read: 25us (Max.) ­ Read Cycle: 45ns - Write Cycle Time ­ Page Program Time: 400us (Typ.) 700us (Max.) ­ Block Erase Time: 3.5 ms (Typ.) 10ms (Max.) - 1bit/cell - mand/Address/Data Multiplexed DQ Port - Hardware Data Protection ­ Program/Erase Lockout During Power Transitions - Reliable CMOS Floating Gate Technology ­ pliant to JESD47K Specifications ­ ECC Requirement: 8bit / 512Byte ­ Endurance: 60K-P/E Cycle Times ­ Uncycled Data Retention: 10year of real time use at 55°C - mand Register Operation - Number of partial program cycles in the same page (NOP): 4 - Automatic Page 0 Read at Power-Up Option ­ Boot from NAND support ­ Automatic Memory Download - Cache Program Operation for High Performance Program - Cache Read Operation - Copy-Back Operation - EDO mode - Page copy ORDERING INFORMATION Product ID Speed Package F59D8G81KSA -45TG2R 45 ns 48 pin...