Datasheet4U Logo Datasheet4U.com

F59D8G81KSA - 1.8V NAND Flash Memory

Description

The device is an 8Gb SLC NAND Flash memory, which is stacked by two 4Gb chips for some special operations and applications.

The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.

Features

  • Density ­ 8Gb(4Gb x 2).
  • Voltage Supply ­ VCC: 1.8V (1.7 V ~ 1.95V).
  • Organization ­ Page Size: (4K + 256) bytes ­ Data Register: (4K + 256) bytes ­ Block Size: 64Pages = (256K + 16K) bytes ­ Number of Planes: 1 ­ Number of Block per Die (LUN)= 2048.
  • Automatic Program and Erase ­ Page Program: (4K + 256) bytes ­ Block Erase: (256K + 16K) bytes.
  • Page Read Operation ­ Random Read: 25us (Max. ) ­ Read Cycle: 45ns.
  • Write Cycle Time ­ Page Program Time: 400us (Typ. ) 700us.

📥 Download Datasheet

Datasheet preview – F59D8G81KSA

Datasheet Details

Part number F59D8G81KSA
Manufacturer ESMT
File Size 1.11 MB
Description 1.8V NAND Flash Memory
Datasheet download datasheet F59D8G81KSA Datasheet
Additional preview pages of the F59D8G81KSA datasheet.

📁 Similar Datasheet

  • F59D1G161A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
  • F59D1G81A - 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
  • F59D2G161A - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
  • F59D2G81A - 2 Gbit (256M x 8 / 128M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
  • F59D4G161A - 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
  • F59D4G81A - 4 Gbit (512M x 8 / 256M x 16) 1.8V NAND Flash Memory (Elite Semiconductor)
  • F59L1G81A - 1 Gbit (128M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
  • F59L2G81A - 2 Gbit (256M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
  • F59L4G81A - 4 Gbit (512M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
  • F59L512M81A - 512Mbit (64M x 8) 3.3V NAND Flash Memory (Elite Semiconductor)
Other Datasheets by ESMT

Full PDF Text Transcription

Click to expand full text
ESMT Flash (Preliminary) F59D8G81KSA (2R) 8 Gbit (1Gb x 8) 1.8V NAND Flash Memory FEATURES  Density ­ 8Gb(4Gb x 2)  Voltage Supply ­ VCC: 1.8V (1.7 V ~ 1.95V)  Organization ­ Page Size: (4K + 256) bytes ­ Data Register: (4K + 256) bytes ­ Block Size: 64Pages = (256K + 16K) bytes ­ Number of Planes: 1 ­ Number of Block per Die (LUN)= 2048  Automatic Program and Erase ­ Page Program: (4K + 256) bytes ­ Block Erase: (256K + 16K) bytes  Page Read Operation ­ Random Read: 25us (Max.) ­ Read Cycle: 45ns  Write Cycle Time ­ Page Program Time: 400us (Typ.) 700us (Max.) ­ Block Erase Time: 3.5 ms (Typ.) 10ms (Max.
Published: |