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F59D8G81KSA Datasheet 1.8V NAND Flash Memory

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT Flash (Preliminary) F59D8G81KSA (2R) 8 Gbit (1Gb x 8) 1.

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General Description

The device is an 8Gb SLC NAND Flash memory, which is stacked by two 4Gb chips for some special operations and applications.

The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.

The Erase operation is implemented in a single block unit (256Kbytes + 16Kbytes).

Key Features

  • Density ­ 8Gb(4Gb x 2).
  • Voltage Supply ­ VCC: 1.8V (1.7 V ~ 1.95V).
  • Organization ­ Page Size: (4K + 256) bytes ­ Data Register: (4K + 256) bytes ­ Block Size: 64Pages = (256K + 16K) bytes ­ Number of Planes: 1 ­ Number of Block per Die (LUN)= 2048.
  • Automatic Program and Erase ­ Page Program: (4K + 256) bytes ­ Block Erase: (256K + 16K) bytes.
  • Page Read Operation ­ Random Read: 25us (Max. ) ­ Read Cycle: 45ns.
  • Write Cycle Time ­ Page Program Time: 400us (Typ. ) 700us.

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