F59D8G81XB

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Datasheet Details

Part number	F59D8G81XB
Datasheet	F59D8G81XB-ESMT.pdf
File Size	2.08 MB
Manufacturer	ESMT (Elite Semiconductor Microelectronics Technology)
Description	8-Gbit 1.8V NAND Flash Memory

F59D8G81XB Overview

The device is an 8Gb SLC NAND Flash memory, which is stacked by two 4Gb chips for some special operations and applications. NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer mands, address, and data.

F59D8G81XB Key Features

Density
8 Gb (4 Gb x 2)
Voltage Supply: 1.8V (1.7 V ~ 1.95V)
Open NAND Flash Interface (ONFI) 1.0-pliant
Single-level cell (SLC) technology
Organization
Page size: 4352 bytes (4096 + 256 bytes)
Block size: 64 pages
Number of planes: 1
Asynchronous I/O performance

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F59D8G81KSA	1.8V NAND Flash Memory
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F59D1G161MA-45BG2L	1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161MA-45TG2L	1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G161MB	1.8V NAND Flash Memory
F59D1G161MB-45BG2M	1.8V NAND Flash Memory
F59D1G161MB-45TG2M	1.8V NAND Flash Memory
F59D1G81LB-45BCG2M	1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory
F59D1G81LB-45BG2M	1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

Datasheet Details

F59D8G81XB Overview

F59D8G81XB Key Features

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

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