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F59L2G81KA Datasheet 2-gbit 3.3v Nand Flash Memory

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT Flash.

General Description

The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments.

The Erase operation is implemented in a single block unit (128Kbytes + 8Kbytes).

The device is a memory device which utilizes the I/O pins for both address and data input/output as well as mand inputs.

Key Features

  • Voltage Supply ­ VCC: 3.3V (2.7 V ~ 3.6V).
  • Organization ­ Page Size: (2K + 128) bytes ­ Data Register: (2K + 128) bytes ­ Block Size: 64Pages = (128K + 8K) bytes ­ Number of Block per Die (LUN)= 2048.
  • Automatic Program and Erase ­ Page Program: (2K + 128) bytes ­ Block Erase: (128K + 8K) bytes.
  • Page Read Operation ­ Random Read: 25us (Max. ) ­ Read Cycle: 25ns.
  • Write Cycle Time ­ Page Program Time: 400us (Typ. ) 700us (Max. ) ­ Block Erase Time: 3 ms (Typ. ) 10ms (Max. ) F5.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Elite Semiconductor Logo F59L2G81A 2 Gbit (256M x 8) 3.3V NAND Flash Memory Elite Semiconductor

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

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F59L2G81LA-25BG 2 Gbit (256M x 8) 3.3V NAND Flash Memory
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F59L1G81LA 1 Gbit (128M x 8) 3.3V NAND Flash Memory
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F59L2G81KA Distributor