F59L2G81A
F59L2G81A is 2 Gbit (256M x 8) 3.3V NAND Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
ESMT
Flash
Features
- Voltage Supply: 3.3V (2.7V ~ 3.6V)
- Organization
- Memory Cell Array: (256M + 16M) x 8bit
- Data Register: (2K + 64) x 8bit
- Automatic Program and Erase
- Page Program: (2K + 64) byte
- Block Erase: (128K + 4K) byte
- Page Read Operation
- Page Size: (2K + 64) bytes
- Random Read: 25us (Max.)
- Serial Access: 25ns (Min.)
- Memory Cell: 1bit/Memory Cell
- Fast Write Cycle Time
- Program time: 350us (Typ.)
- Block Erase time: 3.5ms (Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Program/Erase Lockout During Power Transitions
2 Gbit (256M x 8) 3.3V NAND Flash Memory
- Reliable CMOS Floating Gate Technology
- ECC Requirement:...
