F59L2G81KA-25BG2N
F59L2G81KA-25BG2N is 2-Gbit 3.3V NAND Flash Memory manufactured by Elite Semiconductor Microelectronics Technology.
- Part of the F59L2G81KA comparator family.
- Part of the F59L2G81KA comparator family.
ESMT
Flash
Features
- Voltage Supply VCC: 3.3V (2.7 V ~ 3.6V)
- Organization Page Size: (2K + 128) bytes Data Register: (2K + 128) bytes Block Size: 64Pages = (128K + 8K) bytes Number of Block per Die (LUN)= 2048
- Automatic Program and Erase Page Program: (2K + 128) bytes Block Erase: (128K + 8K) bytes
- Page Read Operation Random Read: 25us (Max.) Read Cycle: 25ns
- Write Cycle Time Page Program Time: 400us (Typ.) 700us (Max.) Block Erase Time: 3 ms (Typ.) 10ms (Max.)
F59L2G81KA (2N)
Operation Temperature Condition -40°C~105°C
2 Gbit (256M x 8) 3.3V NAND Flash Memory
- 1bit/cell
- mand/Address/Data Multiplexed DQ Port
- Hardware Data Protection
Program/Erase...
