F59L2G81LA-25BG

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

F59L2G81LA-25BG datasheet by ESMT (Elite Semiconductor Microelectronics Technology).

This datasheet includes multiple variants, all published together in a single manufacturer document.

F59L2G81LA-25BG Datasheet Details

Part number	F59L2G81LA-25BG
Datasheet	F59L2G81LA-25BG F59L2G81LA-25TG Datasheet (PDF)
File Size	1.69 MB
Manufacturer	ESMT (Elite Semiconductor Microelectronics Technology)
Description	2 Gbit (256M x 8) 3.3V NAND Flash Memory

ESMT.

Memory Cell Array: (256M + 16M) x 8bit
Data Register: (2K + 64) x 8bit Automatic Program and Erase
Page Program: (2K + 64) byte
Block Erase: (128K + 4K) byte Page Read Operation
Page Size: (2K + 64) bytes
Random Read: 25us (Max.)
Serial Access: 25ns (Min.) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time
Program time: 400us (Typ.)
Block Erase time: 3ms (Typ.) mand/Address/Data Multiplexed I/O Port Hardware Data Protection
Program/Erase Lockout During Power Transitions