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F59L2G81LA-25TG Datasheet 2 Gbit (256m X 8) 3.3v Nand Flash Memory

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT Flash.

Key Features

  • Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (256M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) byte - Block Erase: (128K + 4K) byte Page Read Operation - Page Size: (2K + 64) bytes - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 400us (Typ. ) - Block Erase time: 3ms (Typ. ) Command/Address/Data Multiplexed I/O Port Hardware Data Protection -.

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
F59L2G81LA-25BG 2 Gbit (256M x 8) 3.3V NAND Flash Memory
F59L2G81KA 2-Gbit 3.3V NAND Flash Memory
F59L2G81KA-25BCG2N 2-Gbit 3.3V NAND Flash Memory
F59L2G81KA-25BG2N 2-Gbit 3.3V NAND Flash Memory
F59L2G81KA-25TG2N 2-Gbit 3.3V NAND Flash Memory
F59L2G81XA 3.3V NAND Flash Memory
F59L2G81XA-25BG2B 3.3V NAND Flash Memory
F59L2G81XA-25TG2B 3.3V NAND Flash Memory
F59L1G81LA 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81LB 1 Gbit (128M x 8) 3.3V NAND Flash Memory

F59L2G81LA-25TG Distributor