• Part: M12L2561616A-7TG2T
  • Description: 4M x 16 Bit x 4 Banks Synchronous DRAM
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 1.66 MB
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Datasheet Summary

ESMT SDRAM Features - JEDEC standard 3.3V power supply - LVTTL patible with multiplexed address - Four banks operation - MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave) - All inputs are sampled at the positive going edge of the system clock - Burst Read single write operation - DQM for masking - Auto & self refresh - 64ms refresh period (8K cycle) - All Pb-free products are RoHS-pliant M12L2561616A (2T) 4M x 16 Bit x 4 Banks Synchronous DRAM ORDERING INFORMATION Product ID M12L2561616A-5TG2T M12L2561616A-6TG2T M12L2561616A-7TG2T M12L2561616A-5BG2T M12L2561616A-6BG2T M12L2561616A-7BG2T Max...