• Part: M12L2561616A-7TIAG2T
  • Description: 4M x 16 Bit x 4 Banks Synchronous DRAM
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 1.44 MB
M12L2561616A-7TIAG2T Datasheet (PDF) Download
Elite Semiconductor Microelectronics Technology
M12L2561616A-7TIAG2T

Description

The M12L2561616A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 16 bits. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Key Features

  • JEDEC standard 3.3V power supply
  • LVTTL compatible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave )
  • All inputs are sampled at the positive going edge of the system clock
  • Burst Read single write operation
  • DQM for masking
  • 16ms refresh period (8K cycle)
  • If operating ambient temperature > 85℃, the device can not support self refresh function.
  • All Pb-free products are RoHS-Compliant