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M12L32321A-5BG2G

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

M12L32321A-5BG2G datasheet by ESMT (Elite Semiconductor Microelectronics Technology).

This datasheet includes multiple variants, all published together in a single manufacturer document.

M12L32321A-5BG2G datasheet preview

M12L32321A-5BG2G Datasheet Details

Part number M12L32321A-5BG2G
Datasheet M12L32321A-5BG2G M12L32321A Datasheet (PDF)
File Size 526.90 KB
Manufacturer ESMT (Elite Semiconductor Microelectronics Technology)
Description 512K x 32Bit x 2Banks Synchronous DRAM
M12L32321A-5BG2G page 2 M12L32321A-5BG2G page 3

M12L32321A-5BG2G Overview

The M12L32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for...

M12L32321A-5BG2G Key Features

  • JEDEC standard 3.3V ± 0.3V power supply
  • LVTTL patible with multiplexed address
  • Dual banks operation
  • MRS cycle with address key programs
  • CAS Latency (2 & 3 )
  • Burst Length (1, 2, 4, 8 & full page)
  • Burst Type (Sequential & Interleave)
  • All inputs are sampled at the positive going edge of the system clock
  • Burst Read Single-bit Write operation
  • DQM for masking
ESMT (Elite Semiconductor Microelectronics Technology) logo - Manufacturer

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M12L32321A-5BG2G Distributor

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