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M12L32321A-6BG2G Datasheet 512k X 32bit X 2banks Synchronous Dram

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT SDRAM M12L32321A (2G) 512K x 32Bit x 2Banks Synchronous.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The M12L32321A is 33,554,432 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 32 bits, fabricated with high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, h

Key Features

  • JEDEC standard 3.3V ± 0.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Dual banks operation.
  • MRS cycle with address key programs - CAS Latency (2 & 3 ) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst Read Single-bit Write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period (4K cycle).

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M12L32321A-5BG2G 512K x 32Bit x 2Banks Synchronous DRAM
M12L32321A-7BG2G 512K x 32Bit x 2Banks Synchronous DRAM
M12L32162A-7BG 1M x 16Bit x 2Banks Synchronous DRAM
M12L32162A-7TG 1M x 16Bit x 2Banks Synchronous DRAM
M12L128168A-5BG 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BG2N 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BG2S 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BVAG2N Synchronous DRAM
M12L128168A-5BVAG2S 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BVG2N Synchronous DRAM

M12L32321A-6BG2G Distributor