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M12L5121632A-6BG2T Datasheet 8m X 16 Bit X 4 Banks Synchronous Dram

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT SDRAM M12L5121632A (2T) 8M x 16 Bit x 4 Banks Synchronous.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The device is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave ).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst Read single write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period (8K cycle).
  • All Pb-free products are RoHS-.

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M12L5121632A-6TG2T 8M x 16 Bit x 4 Banks Synchronous DRAM
M12L5121632A-5BG2T 8M x 16 Bit x 4 Banks Synchronous DRAM
M12L5121632A-5TG2T 8M x 16 Bit x 4 Banks Synchronous DRAM
M12L5121632A-7BG2T 8M x 16 Bit x 4 Banks Synchronous DRAM
M12L5121632A-7TG2T 8M x 16 Bit x 4 Banks Synchronous DRAM
M12L5121632A 8M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BG 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BG2N 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BG2S 2M x 16 Bit x 4 Banks Synchronous DRAM
M12L128168A-5BVAG2N Synchronous DRAM

M12L5121632A-6BG2T Distributor