• Part: M12L64164A-5TG2Y
  • Description: 1M x 16 Bit x 4 Banks Synchronous DRAM
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 1.22 MB
Download M12L64164A-5TG2Y Datasheet PDF
Elite Semiconductor Microelectronics Technology
M12L64164A-5TG2Y
M12L64164A-5TG2Y is 1M x 16 Bit x 4 Banks Synchronous DRAM manufactured by Elite Semiconductor Microelectronics Technology.
FEATURES y JEDEC standard 3.3V power supply y LVTTL patible with multiplexed address y Four banks operation y MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave) y All inputs are sampled at the positive going edge of the system clock y DQM for masking y Auto & self refresh y 64ms refresh period (4K cycle) - 15.6 μ s refresh interval M12L64164A (2Y) 1M x 16 Bit x 4 Banks Synchronous DRAM ORDERING INFORMATION Product ID Max Freq. Package ments M12L64164A-5TG2Y 200MHz 54 TSOP II Pb-free M12L64164A-6TG2Y 166MHz 54 TSOP II Pb-free M12L64164A-7TG2Y M12L64164A-5BG2Y M12L64164A-6BG2Y M12L64164A-7BG2Y 143MHz 200MHz 166MHz 143MHz 54 TSOP II 54 VBGA 54 VBGA 54 VBGA Pb-free Pb-free Pb-free Pb-free GENERAL DESCRIPTION The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits. Synchronous design allows precise cycle controls...