M12L64164A-6BG2C Datasheet 1m X 16 Bit X 4 Banks Synchronous Dram

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT SDRAM.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	M12L64164A-6BG2C
Manufacturer	ESMT (Elite Semiconductor Microelectronics Technology)
File Size	1.79 MB
Description	1M x 16 Bit x 4 Banks Synchronous DRAM
Datasheet	M12L64164A-6BG2C M12L64164A Datasheet (PDF)

The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits.

Synchronous design allows precise cycle controls with the use of sys

JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock DQM for masking Auto & self refresh 64ms refresh period (4K cycle) - 15.6 µ s refresh interval M12L64164A (2C) 1M x 16 Bit x 4 Banks Synchronous DRAM.

Part Number	Description
M12L64164A-6BG2M	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-6BG2Y	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-6TG2C	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-6TG2M	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-6TG2Y	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5BG2C	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5BG2M	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5BG2Y	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5TG2C	1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5TG2M	1M x 16 Bit x 4 Banks Synchronous DRAM