Part M12L64164A-6TG2C
Description 1M x 16 Bit x 4 Banks Synchronous DRAM
Manufacturer Elite Semiconductor Microelectronics Technology
Size 1.79 MB
Elite Semiconductor Microelectronics Technology
M12L64164A-6TG2C

Overview

The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock cycle.

  • JEDEC standard 3.3V power supply
  • LVTTL compatible with multiplexed address
  • Four banks operation
  • MRS cycle with address key programs - CAS Latency (2 & 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave)
  • All inputs are sampled at the positive going edge of the system clock
  • DQM for masking
  • Auto & self refresh
  • 64ms refresh period (4K cycle) - 15.6  s refresh interval