M13D64322A-4BG2S

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

M13D64322A-4BG2S datasheet by ESMT (Elite Semiconductor Microelectronics Technology).

This datasheet includes multiple variants, all published together in a single manufacturer document.

M13D64322A-4BG2S Datasheet Details

Part number	M13D64322A-4BG2S
Datasheet	M13D64322A-4BG2S M13D64322A Datasheet (PDF)
File Size	1.20 MB
Manufacturer	ESMT (Elite Semiconductor Microelectronics Technology)
Description	512K x 32 Bit x 4 Banks LPDDR SDRAM

M13D64322A-4BG2S Overview

Ball Name Function A0~A10, BA0~BA1 Address inputs - Row address A0~A10 - Column address A0~ A7 A10/AP : Bank selects (4 Banks) DQ0~DQ31 Data-in/Data-out RAS CAS WE VSS VDD DQS0~DQS3 Row address strobe Column address strobe Write enable Ground Power Bi-directional Data Strobe. DQS0 corresponds to the data on DQ0~DQ7;.

M13D64322A-4BG2S Key Features

DS (Drive Strength)
Deep Power Down Mode (DPD Mode)
Row address A0~A10
Column address A0~ A7 A10/AP : AUTO Precharge BA0~BA1 : Bank selects (4 Banks)

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M13D64322A-4BG2S Datasheet Details

M13D64322A-4BG2S Overview

M13D64322A-4BG2S Key Features

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

M13D64322A-4BG2S Distributor