M13D64322A-4BG2S Datasheet | Elite Semiconductor Microelectronics Technology

Features JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) No DLL; CLK to DQS is not synchronized. Differential clock inputs (CLK and CLK ) Four bank operation CAS Latency : 2, 3 Burst Type : Sequential and Interleave Burst Length : 2, 4, 8, 16 & full page Special function support - DS (Drive Strength) - Deep Power Down Mode (DPD Mode) M13D64322A (2S) 512K x 32 Bit x 4 Banks Low Power DDR SDRAM All inputs except data & DM are sampled at the rising edge of the system clock(CLK) DQS is edge-aligned with data for READ; center-aligned with data for WRITE Data mask (DM) for write masking only VDD = 1.7V ~ 1.95V VDDQ = 1.7V ~ 1.95V Auto & Self refresh 15.6us refresh interval (64ms refresh period, 4K cycle) LVCMOS-patible inputs Ordering Information Product ID M13D64322A -4BG2S M13D64322A -4.5BG2S M13D64322A -5BG2S Max Freq. 250MHz 222MHz 200MHz Package ments 1.8V 144 ball FBGA Pb-free Functional Block Diagram CLK CLK CKE Clock Generator Address Mode Register & Extended Mode Register Row Address Buffer & Refresh Counter CS RAS CAS WE Column Address Buffer & Refresh Counter Bank D Bank C Bank B Bank A Sense Amplifier Column Decoder Data Control Circuit DQ mand Decoder Control Logic Row Decoder Latch Circuit Input & Output Buffer Elite Semiconductor Memory Technology Inc. Publication Date :Jan. 2016 Revision : 1.1 1/49 ESMT M13D64322A (2S) BALL CONFIGURATION (TOP VIEW) (BGA144, 12mm X12mm X1.4m Body, 0.8mm Ball...