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M14D1G1664A-1.5BG2S Datasheet Ddr-ii Sdram

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

Overview: ESMT DDR II SDRAM M14D1G1664A (2S) 8M x 16 Bit x 8 Banks DDR II.

Key Features

  • JEDEC Standard.
  • VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V.
  • Internal pipelined double-data-rate architecture; two data access per clock cycle.
  • Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
  • On-chip DLL.
  • Differential clock inputs (CLK and CLK ).
  • DLL aligns DQ and DQS transition with CLK transition.
  • 8 bank operation.
  • CAS Latency : 3, 4, 5, 6, 7.
  • Additive Latency: 0, 1, 2, 3, 4, 5, 6.

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M14D1G1664A-1.5BG2P 8M x 16 Bit x 8 Banks DDR II SDRAM
M14D1G1664A-1.6BG2P 8M x 16 Bit x 8 Banks DDR II SDRAM
M14D1G1664A-1.6BG2S DDR-II SDRAM
M14D1G1664A-1.8BG2P 8M x 16 Bit x 8 Banks DDR II SDRAM
M14D1G1664A-1.8BG2S DDR-II SDRAM
M14D1G1664A-2.5BG2P 8M x 16 Bit x 8 Banks DDR II SDRAM
M14D1G1664A-2.5BG2S DDR-II SDRAM
M14D1G1664A 8M x 16 Bit x 8 Banks DDR II SDRAM
M14D1G8128A-1.5BG2P 16M x 8 Bit x 8 Banks DDR II SDRAM
M14D1G8128A-1.6BG2P 16M x 8 Bit x 8 Banks DDR II SDRAM

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