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M14D5121632A-1.8BBG2M - DDR-II SDRAM

Download the M14D5121632A-1.8BBG2M datasheet PDF. This datasheet also covers the M14D5121632A variant, as both devices belong to the same ddr-ii sdram family and are provided as variant models within a single manufacturer datasheet.

Features

  • JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation. On-chip DLL Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition Quad bank operation CAS Latency : 3, 4, 5, 6, 7, 8, 9 Additive Latency: 0, 1, 2, 3, 4, 5, 6, 7 Burst Type : Sequential and Interleave Burst Length.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M14D5121632A-ESMT.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by ESMT

Part Number Description
M14D5121632A-1.8BBG2A DDR-II SDRAM
M14D5121632A-1.8BG2A DDR-II SDRAM
M14D5121632A-1.8BG2M DDR-II SDRAM
M14D5121632A-1.5BG2A DDR-II SDRAM
M14D5121632A-1.5BG2M DDR-II SDRAM

Full PDF Text Transcription

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ESMT (Preliminary) M14D5121632A (2M) DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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