M15T1G1664A-EFBG2T
M15T1G1664A-EFBG2T is 8M x 16 Bit x 8 Banks DDR3 SDRAM manufactured by Elite Semiconductor Microelectronics Technology.
Feature
- Interface and Power Supply ˗ SSTL_135: VDD/VDDQ = 1.35V(-0.067V/+0.1V) ˗ SSTL_15: VDD/VDDQ = 1.5V(±0.075V)
- JEDEC DDR3(L) pliant ˗ 8n Prefetch Architecture ˗ Differential Clock (CK/ CK ) and Data Strobe (DQS/ DQS ) ˗ Double-data rate on DQs, DQS and DM
- Data Integrity ˗ Auto Refresh and Self Refresh Modes
- Power Saving Mode ˗ Partial Array Self Refresh(PASR) ˗ Power Down Mode
- Signal Integrity ˗ Configurable DS for system patibility ˗ Configurable On-Die Termination ˗ ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm ± 1%)
M15T1G1664A (2T)
8M x 16 Bit x 8 Banks DDR3(L) SDRAM
- Signal Synchronization ˗ Write Leveling via MR settings ˗ Read Leveling via MPR
- Programmable Functions ˗ CAS Latency (6/7/8/9/10/11/12/13/14) ˗ CAS Write Latency (5/6/7/8/9/10) ˗ Additive Latency (0/CL-1/CL-2) ˗ Write Recovery Time (5/6/7/8/10/12/14/16) ˗ Burst Type (Sequential/Interleaved) ˗ Burst Length (BL8/BC4/BC4 or 8 on the fly) ˗ Self Refresh Temperature Range(Normal/Extended) ˗ Output Driver Impedance (34/40) ˗ On-Die Termination of RTT_Nom(20/30/40/60/120) ˗ On-Die Termination of RTT_WR(60/120) ˗ Precharge Power Down (slow/fast)
Table 1. Ordering Information
Product ID
Max Freq.
Data Rate (CL-t RCD-t RP)
Package ments
M15T1G1664A- EFBG2T M15T1G1664A- DEBG2T
1066 MHz 933 MHz
1.35V / 1.5V 1.35V / 1.5V
DDR3(L)-2133 (14-14-14) DDR3(L)-1866 (13-13-13)
96 ball BGA 96 ball BGA
Pb-free Pb-free
Elite Semiconductor Microelectronics Technology Inc
Publication Date: Feb. 2025 Revision: 1.1 1/174
ESMT
M15T1G1664A (2T)
Contents
Feature
1 Description
10 Basic Functionality...
