M15T4G16256A-DEBG2P
M15T4G16256A-DEBG2P is 32M x 16 Bit x 8 Banks DDR3 SDRAM manufactured by Elite Semiconductor Microelectronics Technology.
- Part of the M15T4G16256A-EFBG2P comparator family.
- Part of the M15T4G16256A-EFBG2P comparator family.
ESMT
DDR3(L) SDRAM
Feature
- VDD = VDDQ = 1.35V (1.283- 1.45V)
- Backward-patible to VDD = VDDQ = 1.5V ±0.075V
- Differential bidirectional data strobe
- 8n-bit prefetch architecture
- Differential clock inputs (CK, CK#)
- 8 internal banks
- Nominal and dynamic on-die termination (ODT)
- for data, strobe, and mask signals
- Programmable CAS (READ) latency (CL)
- Programmable posted CAS additive latency (AL)
- Programmable CAS (WRITE) latency (CWL)
M15T4G16256A (2P)
32M x 16 Bit x 8 Banks DDR3(L) SDRAM
- Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
- Selectable BC4 or BL8 on-the-fly (OTF)
- Self refresh mode
- Self refresh temperature (SRT)
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