Part M15T4G16256A-EFBG2P
Description 32M x 16 Bit x 8 Banks DDR3 SDRAM
Manufacturer Elite Semiconductor Microelectronics Technology
Size 6.15 MB
Elite Semiconductor Microelectronics Technology
M15T4G16256A-EFBG2P

Overview

The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.

  • VDD = VDDQ = 1.35V (1.283-1.45V)
  • Backward-compatible to VDD = VDDQ = 1.5V ±0.075V
  • Differential bidirectional data strobe
  • 8n-bit prefetch architecture
  • Differential clock inputs (CK, CK#)
  • 8 internal banks
  • Nominal and dynamic on-die termination (ODT)
  • for data, strobe, and mask signals
  • Programmable CAS (READ) latency (CL)
  • Programmable posted CAS additive latency (AL)