Datasheet Summary
ESMT
Mobile SDRAM
Features
1.8V power supply LVCMOS patible with multiplexed address Four banks operation MRS cycle with address key programs
- CAS Latency (2, 3)
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave) EMRS cycle with address All inputs are sampled at the positive going edge of the system clock Special function support
- PASR (Partial Array Self Refresh)
- TCSR (Temperature pensated Self Refresh)
- DS (Driver Strength)
- Deep Power Down (DPD) Mode DQM for masking Auto & self refresh 64ms refresh period (8K cycle)
M52D5121632A
8M x 16 Bit x 4 Banks
Mobile Synchronous DRAM
ORDERING INFORMATION
Product ID
Max Freq. Package ments
M52D5121632A...