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ESMT
Mobile SDRAM
FEATURES
1.8V power supply LVCMOS compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (2, 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave) EMRS cycle with address All inputs are sampled at the positive going edge of the system clock Special function support - PASR (Partial Array Self Refresh) - TCSR (Temperature Compensated Self Refresh) - DS (Driver Strength) - Deep Power Down (DPD) Mode DQM for masking Auto & self refresh 64ms refresh period (8K cycle)
M52D5121632A
8M x 16 Bit x 4 Banks
Mobile Synchronous DRAM
ORDERING INFORMATION
Product ID
Max Freq.
M52D5121632A Datasheet
