M52D5121632A Datasheet | Elite Semiconductor Microelectronics Technology

FEATURES 1.8V power supply LVCMOS patible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency (2, 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave) EMRS cycle with address All inputs are sampled at the positive going edge of the system clock Special function support - PASR (Partial Array Self Refresh) - TCSR (Temperature pensated Self Refresh) - DS (Driver Strength) - Deep Power Down (DPD) Mode DQM for masking Auto & self refresh 64ms refresh period (8K cycle) 8M x 16 Bit x 4 Banks Mobile Synchronous DRAM ORDERING INFORMATION Product ID Max Freq. Package ments M52D5121632A-5BG M52D5121632A-6BG M52D5121632A-7BG 200MHz 54 Ball FBGA 166MHz 54 Ball FBGA 143MHz 54 Ball FBGA Pb-free Pb-free Pb-free GENERAL DESCRIPTION The M52D5121632A is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits. Synchronous design allows...