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M52D5121632A

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

M52D5121632A datasheet by ESMT (Elite Semiconductor Microelectronics Technology).

M52D5121632A datasheet preview

M52D5121632A Datasheet Details

Part number M52D5121632A
Datasheet M52D5121632A-ESMT.pdf
File Size 1.15 MB
Manufacturer ESMT (Elite Semiconductor Microelectronics Technology)
Description 8M x 16 Bit x 4 Banks Mobile SDRAM
M52D5121632A page 2 M52D5121632A page 3

M52D5121632A Overview

The M52D5121632A is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits. Synchronous design allows precise.

M52D5121632A Key Features

  • CAS Latency (2, 3)
  • Burst Length (1, 2, 4, 8 & full page)
  • Burst Type (Sequential & Interleave) EMRS cycle with address All inputs are sampled at the positive going edge of the sy
  • PASR (Partial Array Self Refresh)
  • TCSR (Temperature pensated Self Refresh)
  • DS (Driver Strength)
  • Deep Power Down (DPD) Mode DQM for masking Auto & self refresh 64ms refresh period (8K cycle)
ESMT (Elite Semiconductor Microelectronics Technology) logo - Manufacturer

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

View all ESMT (Elite Semiconductor Microelectronics Technology) datasheets

Part Number Description
M52D5121632A-5BG 8M x 16 Bit x 4 Banks Mobile SDRAM
M52D5121632A-6BG 8M x 16 Bit x 4 Banks Mobile SDRAM
M52D5121632A-7BG 8M x 16 Bit x 4 Banks Mobile SDRAM
M52D5123216A 4M x 32 Bit x 4 Banks Mobile SDRAM
M52D5123216A-5BG 4M x 32 Bit x 4 Banks Mobile SDRAM
M52D5123216A-6BG 4M x 32 Bit x 4 Banks Mobile SDRAM
M52D5123216A-7BG 4M x 32 Bit x 4 Banks Mobile SDRAM
M52D2561616A 4M x 16 Bit x 4 Banks Mobile SDRAM
M52D2561616A-5BG2F 4M x 16 Bit x 4 Banks Mobile SDRAM
M52D2561616A-6BG2F 4M x 16 Bit x 4 Banks Mobile SDRAM

M52D5121632A Distributor

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