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M52D5123216A Datasheet 4M x 32 Bit x 4 Banks Mobile SDRAM

Manufacturer: ESMT (Elite Semiconductor Microelectronics Technology)

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General Description

The M52D5123216A is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 32 bits.

Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Overview

ESMT Mobile SDRAM.

Key Features

  • 1.8V power supply.
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs - CAS Latency (2, 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave).
  • EMRS cycle with address.
  • All inputs are sampled at the positive going edge of the system clock.
  • Special function support - PASR (Partial Array Self Refresh) - TCSR (Temperature Compensated Self Refresh) - DS (Driver Strength) - Deep Power Dow.

More Datasheets from ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M52D5123216A-5BG 4M x 32 Bit x 4 Banks Mobile SDRAM
M52D5123216A-6BG 4M x 32 Bit x 4 Banks Mobile SDRAM
M52D5123216A-7BG 4M x 32 Bit x 4 Banks Mobile SDRAM
M52D5121632A 8M x 16 Bit x 4 Banks Mobile SDRAM
M52D5121632A-5BG 8M x 16 Bit x 4 Banks Mobile SDRAM
M52D5121632A-6BG 8M x 16 Bit x 4 Banks Mobile SDRAM
M52D5121632A-7BG 8M x 16 Bit x 4 Banks Mobile SDRAM
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M52D2561616A-5BG2F 4M x 16 Bit x 4 Banks Mobile SDRAM
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