M52D5123216A - Mobile Synchronous DRAM

Product Overview

ESMT

Part number	M52D5123216A
Manufacturer	ESMT
File Size	1.86 MB
Description	Mobile Synchronous DRAM
Datasheet	M52D5123216A Datasheet
Additional preview pages of the M52D5123216A datasheet.

The M52D5123216A is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 32 bits.

1.8V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs - CAS Latency (2, 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave).
EMRS cycle with address.
All inputs are sampled at the positive going edge of the system clock.
Special function support - PASR (Partial Array Self Refresh) - TCSR (Temperature Compensated Self Refresh) - DS (Driver Strength) - Deep Power Dow.

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Published: Sep 20, 2018 |