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M52D5123216A-5BG - 4M x 32 Bit x 4 Banks Mobile SDRAM

Download the M52D5123216A-5BG datasheet PDF. This datasheet also covers the M52D5123216A variant, as both devices belong to the same 4m x 32 bit x 4 banks mobile sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

The M52D5123216A is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,194,304 words by 32 bits.

Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock cycle.

Key Features

  • 1.8V power supply.
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs - CAS Latency (2, 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave).
  • EMRS cycle with address.
  • All inputs are sampled at the positive going edge of the system clock.
  • Special function support - PASR (Partial Array Self Refresh) - TCSR (Temperature Compensated Self Refresh) - DS (Driver Strength) - Deep Power Dow.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M52D5123216A-ESMT.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M52D5123216A-6BG 4M x 32 Bit x 4 Banks Mobile SDRAM
M52D5123216A-7BG 4M x 32 Bit x 4 Banks Mobile SDRAM
M52D5123216A 4M x 32 Bit x 4 Banks Mobile SDRAM
M52D5121632A 8M x 16 Bit x 4 Banks Mobile SDRAM
M52D5121632A-5BG 8M x 16 Bit x 4 Banks Mobile SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT Mobile SDRAM FEATURES  1.8V power supply  LVCMOS compatible with multiplexed address  Four banks operation  MRS cycle with address key programs - CAS Latency (2, 3) - Burst Length (1, 2, 4, 8 & full page) - Burst Type (Sequential & Interleave)  EMRS cycle with address  All inputs are sampled at the positive going edge of the system clock  Special function support - PASR (Partial Array Self Refresh) - TCSR (Temperature Compensated Self Refresh) - DS (Driver Strength) - Deep Power Down (DPD) Mode  DQM for masking  Auto & self refresh  64ms refresh period (8K cycle) M52D5123216A 4M x 32 Bit x 4 Banks Mobile Synchronous DRAM ORDERING INFORMATION Product ID Max Freq.