Datasheet Summary
ESMT
Mobile SDRAM
Features
- 1.8V power supply
- LVCMOS patible with multiplexed address
- Four banks operation
- MRS cycle with address key programs
- CAS Latency (2, 3)
- Burst Length (1, 2, 4, 8 & full page)
- Burst Type (Sequential & Interleave)
- EMRS cycle with address
- All inputs are sampled at the positive going edge of the system clock
- Special function support
- PASR (Partial Array Self Refresh)
- TCSR (Temperature pensated Self Refresh)
- DS (Driver Strength)
- Deep Power Down (DPD) Mode
- DQM for masking
- Auto & self refresh
- 64ms refresh period (8K cycle)
M52D5123216A
4M x 32 Bit x 4 Banks
Mobile Synchronous DRAM
ORDERING INFORMATION
Product ID
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