M54D2G16128A
M54D2G16128A is 16M x 16 Bit x 8 Banks LPDDR2 SDRAM manufactured by Elite Semiconductor Microelectronics Technology.
Feature
- JEDEC LPDDR2‐S4B pliance
- HSUL_12 interface (High Speed Unterminated Logic 1.2V)
- Power supply:
- VDD1 = 1.7 to 1.95V
- VDD2, VDDCA, VDDQ = 1.14 to 1.3V
- 4n prefetch architecture
- Multiplexed, double data rate, mand/address inputs; mands entered on every CK edge
- Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c)
- Programmable read latency (RL) and write latency (WL)
- Programmable burst lengths (BL): 4, 8, 16
- Pre-bank refresh for concurrent operation
- Partial Array Self Refresh (PASR)
- Temperature pensated Self Refresh (TCSR) by built‐in temperature sensor
- Deep Power Down mode (DPD)
- Programmable Driver Strength (DS)
- Clock stop capability
Ordering Information
Product ID
M54D2G16128A -1.8BKG M54D2G16128A -2.5BKG M54D2G16128A -3BKG
Max Freq. Data Rate RL
(MHz) (Mb/s/pin)
VDD1 / VDD2,
Package ments
VDDCA, VDDQ
1.8V / 1.2V 134 ball BGA Pb-free
Elite Semiconductor Microelectronics Technology...
