Datasheet4U Logo Datasheet4U.com

M56Z2G16128A-SMBYG2R - 16M x 16 Bit x 8 Banks LPDDR4/LPDDR4X SDRAM

General Description

19 General Notes19 MR0, MR[6:5], MR8, MR13, MR24 Definition 20 IDD Parameters21 Functional Description 25 Monolithic Device Addressing 26 Simplified Bus Interface State Diagram 27 Power-Up and Initialization 29 Voltage Ramp30 Reset Initialization with Stable Power32 Power-Off Sequence33 Controlled P

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
M5600 Wireless Pressure Transducer TE
M5601 Wireless Pressure Transducer TE
M5603C USB2.0 Video Camera Controller Ali Corporation
M5621 ALi High Speed USB 2.0 IDE Device Controller Acer Laboratories
M5623 High-Speed USB2.0 Scanner Controller ALI

Other Datasheets by ESMT (Elite Semiconductor Microelectronics Technology)

Part Number Description
M56Z2G16128A-TNBYG2R 16M x 16 Bit x 8 Banks LPDDR4/LPDDR4X SDRAM
M56Z4G16256A-SMBYG2H 32M x 16 Bit x 8 Banks LPDDR4/LPDDR4X SDRAM
M56Z4G16256A-TNBYG2H 32M x 16 Bit x 8 Banks LPDDR4/LPDDR4X SDRAM
M56Z4G32128A-SMBYG2R 16M x 32 Bit x 8 Banks LPDDR4/LPDDR4X SDRAM
M56Z4G32128A-TNBYG2R 16M x 32 Bit x 8 Banks LPDDR4/LPDDR4X SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ESMT M56Z2G16128A (2R) LPDDR4/LPDDR4X SDRAM 16M x 16 Bit x 8 Banks LPDDR4/LPDDR4X SDRAM Feature  Ultra-low-voltage core and I/O power supply – VDD1 = 1.70–1.95V; 1.80V nominal – VDD2 = 1.06–1.17V; 1.10V nominal – VDDQ = 1.06–1.17V; 1.10V nominal or Low VDDQ = 0.57–0.65V; 0.60V nominal  Array configuration – 128 Meg × 16 (1 channels ×16 I/O)  Device configuration – 128M16 × 1 die in package  16n prefetch DDR architecture  8 internal banks per channel for concurrent operation  Single-data-rate CMD/ADR entry  Bidirectional/differential data strobe per byte lane  Programmable READ and WRITE latencies (RL/WL)  Programmable and on-the-fly burst lengths (BL = 16, 32)  Directed per-bank refresh for concurrent bank operation and ease of command scheduling  Up to 8.