2N5161 - PNP silicon RF power transistors

Datasheet Details

Part number	2N5161
Manufacturer	Unknown Manufacturer
File Size	236.14 KB
Description	PNP silicon RF power transistors
Datasheet	2N5161 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2N5160	Power Transistor	Motorola Semiconductor
2N5163	n-channel JFET	Siliconix
2N5164	SILICON CONTROLLED RECTIFIERS	Motorola Inc
2N5164	SILICON CONTROLLED RECTIFIER	Solid State
2N5164	SILICON CONTROLLED RECTIFIERS	Digitron Semiconductors

Other Datasheets by Unknown Manufacturer

Part Number	Description
2N5160	PNP silicon RF power transistors
2N5162	PNP silicon RF power transistors
2N5164R	THYRISTORS
2N5165R	THYRISTORS
2N5166R	THYRISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2N5161 (SILICON) 2N5162 STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR CASE 36 (TO-60) Case common to emitter PNP silicon RF power transistors designed for amplifier or oscillator applications in military and industrial equipment. Suitable for use as Class B or C output or power oscillator in VHF applications MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation@ TC =25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC PD TJ , Tstg 2NS161 2NS162 40 60 4.0 1.5 5.0 20 0.114 50 0.286 -65 to +200 Unit Vdc Vdc Vdc Adc Watts W;OC °c FIGURE 1 - 175 MHz TEST CIRCUITS !-28 V 2400 pF 3.0pF-~pF~ 1. - 2N5161 L3 0.02PF! Ll L2 rv' ~ L4 ,." 1.