2N5265 - P-Channel junction depletion mode FET

Datasheet Details

Part number	2N5265
Manufacturer	Unknown Manufacturer
File Size	373.59 KB
Description	P-Channel junction depletion mode FET
Datasheet	2N5265 Datasheet
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2N5265 thru (SILICON) 2N5270 P-Channel junction depletion mode (Type A) fieldeffect transistors designed for general-purpose amplifier applications. CASE 20(5) (TO·72) O2 o STYLE 5 PIN 1. SOURCE 10 0 3 2. GATE 1 o 3. DRAIN 4 4. CASE MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Reverse Gate-Source Voltage Drain Current Gate Current -forward Total Device Dissipation @ TA = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Range Symbol VDS VDG VGS(r) ID IG(f) PD Tstg TJ Value 60 60 60 20 10 300 2.0 -65 to +200 -65 to +175 Unit Vdc Vdc Vdc mAdc mAdc mW mWrC °c °c 2·112 2N5265 thru 2N5270 (continued) ELECTRICAL CHARACTERISTICS (T.

Published: Jul 14, 2018 |