| Part number | 2N5265 |
|---|---|
| Datasheet | 2N5265-ETC.pdf |
| File Size | 373.59 KB |
| Manufacturer | Unknown Manufacturer |
| Description | P-Channel junction depletion mode FET |
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2N5265 thru (SILICON) 2N5270 P-Channel junction depletion mode (Type A) fieldeffect transistors designed for general-purpose amplifier applications. CASE 20(5) (TO·72) O2 o STYLE 5 PIN 1. = 2S"C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = 10 /LAde, Vos = 0) IDGate-Source Cutoff Voltage (VOS = 15 Vde, =.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N5265 | GENERAL PURPOSE P-CHANNEL JFET | Motorola |
See all Unknown Manufacturer datasheets
| Part Number | Description |
|---|---|
| 2N5266 | P-Channel junction depletion mode FET |
| 2N5267 | P-Channel junction depletion mode FET |
| 2N5268 | P-Channel junction depletion mode FET |
| 2N5269 | P-Channel junction depletion mode FET |
| 2N5208 | PNP SILICON ANNULAR TRANSISTOR |
| 2N5219 | NPN SILICON ANNULAR TRANSISTOR |
| 2N5220 | NPN SILICON ANNULAR TRANSISTOR |
| 2N5221 | PNP SILICON ANNULAR TRANSISTOR |
| 2N5222 | NPN SILICON ANNULAR TRANSISTOR |
| 2N5223 | NPN SILICON AMPLIFIER TRANSISTOR |
