2N5364 Datasheet Text
2N5358 (SILICON) thru
2N5364
Silicon N-channel junction field-effect transistors depletion mode (Type A) devices designed primarily for general-purpose amplifier applications.
CASE 20 (TO-72)
102 3
4
STYLE 3 PIN 1. 2. 3. 4.
DRAIN SOURCE GATE CASE LEAD
MAXIMUM RATINGS
Rating
Forward Gate Current Reverse Gate-Source Voltage
Drain-Gate Voltage
Total Device Dissipation @TA =25° C
Derate above 25°C Storage Temperature Range
Operating Junction Temperature Range
Symbol
IG(f) VGS(r)
VDG PD
Tstg TJ
Value Unit
10 mAdc
40 Vdc
40 Vdc
300 2.0
-65 to +200 mW mW/oC
°c
-65 to +175 °c
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherWise noted)
Characteristic
OFF CHARACTERISTICS...
