2N5463 Description
2N5460 (SILICON) thru 2N5465 P-channel depletion mode (Type A) junction fieldeffect transistors designed for use in general-purpose amplifier applications. GATE Total Device Dissipation @ TA = 25·C PDI'} 310 mW Derate above 25°C Storage Temperature Range Operating Junction Temperature Range T III stg T III J 2.82 -65 to +150 -65 to +135 mW/"C ·C ·C (1) Continuous package improvements have enhanced these guaranteed...