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2N5465 - P-channel FET

Download the 2N5465 datasheet PDF. This datasheet also covers the 2N5463 variant, as both devices belong to the same p-channel fet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5463-ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5465
Manufacturer Unknown Manufacturer
File Size 214.40 KB
Description P-channel FET
Datasheet download datasheet 2N5465 Datasheet

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Other Datasheets by Unknown Manufacturer

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5460 (SILICON) thru 2N5465 P-channel depletion mode (Type A) junction fieldeffect transistors designed for use in general-purpose amplifier applications. MAXIMUM RATINGS Rating 2N5460 2N5463 2N5461 2N5464 Symbol 2N5462 2N5465 Unit Drain-Gate Voltage VDG 40 60 Vdc Reverse Gate-Source Voltage VGS(r) 40 60 Vdc Forward Gate Current IG(f) 10 mAdc CASE 29 e (TO-92l 1 1 3 STYLE 7· PIN 1 SOURCE 1 DRAIN 3. GATE Total Device Dissipation @ TA = 25·C PDI'} 310 mW Derate above 25°C Storage Temperature Range Operating Junction Temperature Range T III stg T III J 2.82 -65 to +150 -65 to +135 mW/"C ·C ·C (1) Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows. Po = 1.0 W @ T C '" 25°C, Derate above 2SoC - 8.0 mW/oC, T J == -65 to + 150°C.