Unknown Manufacturer 2N5465
P-channel FET
MAXIMUM RATINGS
Rating 2N5460 2N5463 2N5461 2N5464 Symbol 2N5462 2N5465 Unit Drain-Gate Voltage VDG 40 60 Vdc Reverse Gate-Source Voltage VGS(r) 40 60 Vdc Forward Gate Current IG(f) 10 mAdc CASE 29 e (TO-92l 1 1 3 STYLE 7● PIN 1 SOURCE 1 DRAIN 3. GATE Total Device Dissipation @ TA = 25●C PDI'} 310 mW Derate above 25°C Storage Temperature Range Operating Junction Temperature Range T III stg T III J 2.82 -65 to +150 -65 to +135 mW/"C●C
●C (1) Continuous package improvements have enhanced these guaranteed
MAXIMUM RATINGS
as follows. Po = 1.0 W @ T C '" 25°C, Derate above 2SoC - 8.0 mW/oC, T J == -65 to + 150°C. 0JC == 12S o C/W.ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwISe noted) I ICharacteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage - -(IG =10 /lAdc,