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2N5557 - SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS

Download the 2N5557 datasheet PDF. This datasheet also covers the 2N5556 variant, as both devices belong to the same silicon n-channel junction field-effect transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N5556-ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5557
Manufacturer Unknown Manufacturer
File Size 116.08 KB
Description SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
Datasheet download datasheet 2N5557 Datasheet

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Other Datasheets by Unknown Manufacturer

Part Number Description
2N5556 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
2N5558 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
2N5013 0.5AMP HIGH VOLTAGE NPN TRANSISTOR
2N5014 0.5AMP HIGH VOLTAGE NPN TRANSISTOR
2N5015 0.5AMP HIGH VOLTAGE NPN TRANSISTOR

Full PDF Text Transcription

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2N5556 (SILICON) thru 2N5558 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS Depletion Mode (Type A) devices designed for low-noise amplifier appl ications_ • Low Noise Figure - NF =1.0 dB (Max) @ 100 Hz • Low Gate Leakage Current - IGSS = 0.1 nAdc (Max) • Low Input Capacitance - Ciss = 6.0 pF (Max) SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS TYPE A MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total Deviee Dissipation @TA = 25'C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IG(f) PD TJ Tstg Value Unit 30 Vdc 30 Vdc 30 Vdc 10 mAde 300 2.0 .
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