Unknown Manufacturer 2N5557
SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
| Part No. | 2N5557 |
|---|---|
| Datasheet | 2N5557 Download |
| Manufacturer | Unknown Manufacturer |
| Description | SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS |
| Buy | Stock & Price |
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Total Deviee Dissipation @TA = 25'C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IG(f) PD TJ Tstg Value Unit 30 Vdc 30 Vdc 30 Vdc 10 mAde 300 2.0 . mW mW/"C -65 to +175●c -65 to +200
●C FIGURE 1 - EQUIVALENT LOW FREQUENCY CIRCUIT ~~r-OS~----C-gdC-dS-'----IY-~-IV-i~------~ Vis= jw Giss Vos = 1/ross + jw Coss YI, =[YIsI Yrs= -jw Crss Ciss = Cgd + Cgs Crs, =Cgd Coss = Cgd + Cds 2-184 STYLE 1 PIN 1. 2. 3. 4. DIM A F G H J K1 L M N P All JEDEC dimensions and notes apply CASE 20.03 TO●72 2N5556 thru 2N5558 (continued)
ELECTRICAL CHARACTERISTICS
(TA = 25'C unle55 otherwISe noted) Characteristic OFF CHARACTERISTICS Gate-Source Breakdown Voltage (IG = -10 !lAdc, VDS = 0) Gate -Source Cutoff Voltage (VDS = 15 Vdc, ~ = 1. 0 nAdc) Gate Reverse Current (Vas = -15 Vdc, VDS =0) (Vas = -15 Vdc, VDS = 0, TA = 150'C) Symbol 2N5556 2N5557 2N5558 V...