The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2N5849 (SILICON)
NPN SILICON RF POWER TRANSISTOR
· .. designed primarily for use in large·signal amplifier output stages, the 2N5849 is intended for use in industrial communications equip· ment operating at frequencies to 80 MHz.
• Optimized for Operation from a 12.5 Volt Supply • 40 Watts (Min) RF Power Output at 50 MHz • Balanced Emitter Construction for Burn Out Protection
40W-50 MHz
RF POWER TRANSISTOR
NPN SILICON
'MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation @TC - 25°C
Derate above 25°C Storage Temperature Range
Symbol VCEO VCB VEB
IC PD
T stg
Value 24 4B 4.0 7.0 100 571
-65 to +200
Unit Vdc Vdc Vdc Adc Watts mW/oC
°c
-Indicates JEDEC Registered Data.