2N5941
2N5941 is NPN SILICON RF POWER TRANSISTORS manufactured by Unknown Manufacturer.
2N5941 (SILICON) 2N5942
The RF Lin.e
NPN SILICON RF POWER TRANSISTORS
- .. designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment.
- Specified 28 Volt, 30 MHz Characteristics
- Output Power = 40 W (PEP)
- 2N5941 = 80 W (PEP)
- 2N5942
Minimum Gain = 13 d B
Efficiency = 40%
Intermodulation Distortion = -30 d B (Max)
- Isothermal-Resistor Design Results in Rugged Device
- 2N5942 Available as Matched Pairs for Push-Pull
Amplifier Applications
MATCHING PROCEOURE
In the push-pull circuit configuration two device parameters are critical for optimum circuit performance. These parameters are VSE(on) and h FE. Both parameters can be guaranteed by measuring ICO of the devices and selecting pairs with a "Ica ..;; 10 m Ade.
Actual Ica matching is performed in the 2N5942 test circuit with a Ve E equal to 2B Volts. The base bias supply is adjusted to set Ica equal to 40 m Ade using a reference standard 2N5942. The lea of all production 2N5942 transistors is measured using this base bias supply setting. The production 2N5942's are tested and categorized in ranges of 10 m Ade. Finally, the devices are stocked as pairs with a guaranteed l:l.ICQ ~ 10 m Ade.
40 W (PEPI-30 MHz
- 2N5941 80 W (PEPI-30 MHz
- 2N5942
RF POWER TRANSISTORS
NPN SILICON
2N5942
HV/":>- Z o y K l STYPILNE~I:':~~TER
3 EMITTER r------t-B
~rn:,OI=.:.:.±--t. .E::.I
4. COLLECTOR N
~A--I---n-
SEATING PLANE
MILLIMETERS INCH DIM MI. MAX MI' MAX
,.. A 24.84
0.910 0'"
9.47 9.73 0.313 0.383
- C 6.07 7.14 0.239 OBI
... D '.59
O.
.30
216 2.91 0086 0.105
F 0.10 0.15 0.......
