Datasheet4U Logo Datasheet4U.com

2N5942 - NPN SILICON RF POWER TRANSISTORS

This page provides the datasheet information for the 2N5942, a member of the 2N5941 NPN SILICON RF POWER TRANSISTORS family.

📥 Download Datasheet

Datasheet preview – 2N5942

Datasheet Details

Part number 2N5942
Manufacturer ETC
File Size 628.11 KB
Description NPN SILICON RF POWER TRANSISTORS
Datasheet download datasheet 2N5942 Datasheet
Additional preview pages of the 2N5942 datasheet.

📁 Similar Datasheet

  • 2N5943 - HIGH FREQUENCY TRANSISTOR (Motorola)
  • 2N5943 - NPN SILICON HIGH FREQUENCY TRANSISTOR (ASI)
  • 2N5944 - HG RF POWER TRANSISTOR (HGSemi)
  • 2N5944 - RF & MICROWAVE TRANSISTOR (Microsemi)
  • 2N5944 - NPN SILICON RF POWER TRANSISTORS (Motorola)
  • 2N5945 - NPN SILICON RF POWER TRANSISTOR (ASI)
  • 2N5945 - NPN SILICON RF POWER TRANSISTOR (NJS)
  • 2N5945 - NPN SILICON RF POWER TRANSISTORS (Motorola)
  • 2N5946 - RF & MICROWAVE TRANSISTORS (Microsemi Corporation)
  • 2N5946 - NPN SILICON RF POWER TRANSISTORS (Motorola)
Other Datasheets by ETC
  • 2N5941 - NPN SILICON RF POWER TRANSISTORS
  • 2N5944 - NPN SILICON RF POWER TRANSISTORS
  • 2N5945 - NPN SILICON RF POWER TRANSISTORS
  • 2N5946 - NPN SILICON RF POWER TRANSISTORS
  • 2N5900 - GERMANIUM PNP POWER TRANSISTORS
  • 2N5901 - GERMANIUM PNP POWER TRANSISTORS
  • 2N591 - PNP Transistor
  • 2N5974 - PNP SILICON PLASTIC POWER TRANSISTORS

Full PDF Text Transcription

Click to expand full text
2N5941 (SILICON) 2N5942 The RF Lin.e NPN SILICON RF POWER TRANSISTORS · .. designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment. • Specified 28 Volt, 30 MHz Characteristics - Output Power = 40 W (PEP) - 2N5941 = 80 W (PEP) - 2N5942 Minimum Gain = 13 dB Efficiency = 40% Intermodulation Distortion = -30 dB (Max) • Isothermal-Resistor Design Results in Rugged Device • 2N5942 Available as Matched Pairs for Push-Pull Amplifier Applications MATCHING PROCEOURE In the push-pull circuit configuration two device parameters are critical for optimum circuit performance. These parameters are VSE(on) and hFE. Both parameters can be guaranteed by measuring ICO of the devices and selecting pairs with a "Ica .
Published: |