2N5942 - NPN SILICON RF POWER TRANSISTORS

Download the 2N5942 datasheet PDF. This datasheet also covers the 2N5941 variant, as both devices belong to the same npn silicon rf power transistors family and are provided as variant models within a single manufacturer datasheet.

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2N5942 npn silicon rf power transistors by Unknown Manufacturer - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N5941-ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N5942
Manufacturer	Unknown Manufacturer
File Size	628.11 KB
Description	NPN SILICON RF POWER TRANSISTORS
Datasheet	2N5942 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2N5943	HIGH FREQUENCY TRANSISTOR	Motorola
2N5943	NPN SILICON HIGH FREQUENCY TRANSISTOR	ASI
2N5944	HG RF POWER TRANSISTOR	HGSemi
2N5944	RF & MICROWAVE TRANSISTOR	Microsemi
2N5944	NPN SILICON RF POWER TRANSISTORS	Motorola

Other Datasheets by Unknown Manufacturer

Part Number	Description
2N5941	NPN SILICON RF POWER TRANSISTORS
2N5944	NPN SILICON RF POWER TRANSISTORS
2N5945	NPN SILICON RF POWER TRANSISTORS
2N5946	NPN SILICON RF POWER TRANSISTORS
2N5900	GERMANIUM PNP POWER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5941 (SILICON) 2N5942 The RF Lin.e NPN SILICON RF POWER TRANSISTORS · .. designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment. • Specified 28 Volt, 30 MHz Characteristics - Output Power = 40 W (PEP) - 2N5941 = 80 W (PEP) - 2N5942 Minimum Gain = 13 dB Efficiency = 40% Intermodulation Distortion = -30 dB (Max) • Isothermal-Resistor Design Results in Rugged Device • 2N5942 Available as Matched Pairs for Push-Pull Amplifier Applications MATCHING PROCEOURE In the push-pull circuit configuration two device parameters are critical for optimum circuit performance. These parameters are VSE(on) and hFE. Both parameters can be guaranteed by measuring ICO of the devices and selecting pairs with a "Ica .