2N5942 Datasheet | Unknown Manufacturer

2N5941 (SILICON) 2N5942 The RF Lin.e NPN SILICON RF POWER TRANSISTORS - .. designed primarily for applications as a high-power linear amplifier from 2.0 to 30 MHz, in single sideband mobile, marine and base station equipment. - Specified 28 Volt, 30 MHz Characteristics - Output Power = 40 W (PEP) - 2N5941 = 80 W (PEP) - 2N5942 Minimum Gain = 13 d B Efficiency = 40% Intermodulation Distortion = -30 d B (Max) - Isothermal-Resistor Design Results in Rugged Device - 2N5942 Available as Matched Pairs for Push-Pull Amplifier Applications MATCHING PROCEOURE In the push-pull circuit configuration two device parameters are critical for optimum circuit performance. These parameters are VSE(on) and h FE. Both parameters can be guaranteed by measuring ICO of the devices and selecting pairs with a "Ica ..;; 10 m Ade. Actual Ica matching is performed in the 2N5942 test circuit with a Ve E equal to 2B Volts. The base bias supply is adjusted to set Ica equal to 40 m Ade using a reference standard...