Unknown Manufacturer 2N6444
NPN SILICON MONOLITHIC MULTIPLE TRANSISTORS
| Part No. | 2N6444 |
|---|---|
| Datasheet | 2N6444 Download |
| Manufacturer | Unknown Manufacturer |
| Description | NPN SILICON MONOLITHIC MULTIPLE TRANSISTORS |
| Buy | Stock & Price |
2N6441 (SILICON) thru 2N6448 MULTIPLE SILICON ANNULAR MONOLITHIC TRANSISTORS ... designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation" applications.
● Excellent Temperature Tracking - 2N6445 thru 2N6448 "'IVBEl - VBE21 = 0.8 mVdc (Maxi @-55 to +250 C = 1.0 mVdc (Maxi @+25 to +1250 C
● Low Collector-Emitter Saturation Voltage - VCE(satl = 0.1 Vdc (Typl @ IC = 1.0 mAdc
● DC Current Gain Specified - 10 !lAdc to 1.0 mAdc
● High Current-Gain-Bandwidth Product- fT = 500 MHz (Typl @ IC = 0.5 mAdc NPN SILICON MONOLITHIC MULTIPLE TRANSISTORS 'MAXIMUM RATING Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Contmuous Total Power DiSSipation @ T A = 25°C Derate above 25°C Total Power DIssipation @TC = 25°C Derate above 25°C Operatmg and Storage Junction Temperature Range (1) One die or both die with equal power THERMAL CHARACTERISTICS Characteristic Thermal Resist
● Excellent Temperature Tracking - 2N6445 thru 2N6448 "'IVBEl - VBE21 = 0.8 mVdc (Maxi @-55 to +250 C = 1.0 mVdc (Maxi @+25 to +1250 C
● Low Collector-Emitter Saturation Voltage - VCE(satl = 0.1 Vdc (Typl @ IC = 1.0 mAdc
● DC Current Gain Specified - 10 !lAdc to 1.0 mAdc
● High Current-Gain-Bandwidth Product- fT = 500 MHz (Typl @ IC = 0.5 mAdc NPN SILICON MONOLITHIC MULTIPLE TRANSISTORS 'MAXIMUM RATING Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Contmuous Total Power DiSSipation @ T A = 25°C Derate above 25°C Total Power DIssipation @TC = 25°C Derate above 25°C Operatmg and Storage Junction Temperature Range (1) One die or both die with equal power THERMAL CHARACTERISTICS Characteristic Thermal Resist
