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2N6441 (SILICON)
thru
2N6448
MULTIPLE SILICON ANNULAR MONOLITHIC TRANSISTORS
... designed for use as differential amplifiers, dual general-purpose amplifiers, front end detectors and temperature compensation" applications.
• Excellent Temperature Tracking - 2N6445 thru 2N6448
"'IVBEl - VBE21 = 0.8 mVdc (Maxi @-55 to +250 C
= 1.0 mVdc (Maxi @+25 to +1250 C • Low Collector-Emitter Saturation Voltage -
VCE(satl = 0.1 Vdc (Typl @ IC = 1.0 mAdc
• DC Current Gain Specified - 10 !lAdc to 1.0 mAdc • High Current-Gain-Bandwidth Product-
fT = 500 MHz (Typl @ IC = 0.
2N6446 Datasheet
