Datasheet4U Logo Datasheet4U.com

3N142 - SILICON INSULATED GATE FIELD EFFECT TRANSISTOR

Product Overview

📥 Download Datasheet

Datasheet preview – 3N142

Datasheet Details

Part number 3N142
Manufacturer ETC
File Size 278.26 KB
Description SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
Datasheet download datasheet 3N142 Datasheet
Additional preview pages of the 3N142 datasheet.

📁 Similar Datasheet

  • 3N100E - MTB3N100E (Motorola)
  • 3N1012 - Power-Transistor (Infineon)
  • 3N10L26 - Power-Transistor (Infineon)
  • 3N120-E3 - 1200V N-CHANNEL POWER MOSFET (UTC)
  • 3N128 - MOSFET AMPLIFIER (Motorola)
  • 3N128 - Silicon MOS Transistor (General Electric Solid State)
  • 3N150 - N-Channel MOSFET (STMicroelectronics)
  • 3N150-E3 - N-CHANNEL POWER MOSFET (UTC)
Other Datasheets by ETC
  • 3N140 - N-CHANNEL DUAL-GATE TRANSISTOR
  • 3N143 - Silicon MOS Transistor
  • 3N124 - N-channel Transistor
  • 3N125 - N-channel Transistor
  • 3N126 - N-channel Transistor
  • 3N153 - SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
Published: |